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The present invention relates to methods and apparatuses for inspecting a semiconductor device, which is fabricated by transferring a thin film such as a semiconductor layer onto an insulating substrate through epitaxial growth.
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An epitaxial growth apparatus is usually arranged to locally adjust a gas injection amount in an epitaxial growth process for each wafer, in order to form a desired dopant profile of the semiconductor layer.
Japanese Patent Laid-Open No. 2002-160959 discloses a method of determining a dopant profile of a semiconductor layer, wherein an electrically conductive film is formed on a semiconductor substrate and its electrical resistance is measured, and a current density is sequentially changed and the resistance is measured while electric current is supplied thereto, thus measuring a distribution profile of the electrical resistance.Q:
Is it possible to check whether a plane intersects a wire?
Imagine a plane, that has a vertical axis and a horizontal axis. Let’s call the vertical axis „v“ and the horizontal axis „u“.
The plane has another variable, called „delta“. This is the distance between it and the wire.
We know the coordinates of the plane, the coordinates of the wire, and the distance.
At this moment, we can’t know, if the plane intersects the wire in any point.
Is it possible to check if the plane intersects the wire?
To make it more clear: Imagine that we have this plane:
v = 0
u = 0
delta = 0
Now imagine that we increase the value of „delta“.
Our plane must intersect the wire at the point (0, 0), even though it’s at the same time outside the wire. But this is not the point where the plane intersects the wire.
It’s a „simple“
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css essay free download – Free essays on how to master the css html language for school and college * Fast delivery and 24/7 customer support – term paper writing service at professional academic helpThe present invention relates to a semiconductor device and a method of manufacturing the same.
In view of the current demand for highly integrated and large-capacity semiconductor devices, various dielectric thin film are under development in the art. For example, silicon oxide films have generally been known as a silicon oxide film forming material. However, the silicon oxide film has weak film strength and unstable film quality due to its low physical film thickness. In contrast, a nitride film generally has a good film strength and therefore is a promising material for a dielectric thin film.
The nitride film can be formed using various film forming processes including a chemical vapor deposition (CVD) process, a sputtering process, and the like. In particular, the CVD process has been in wide use, because the film forming process can be conducted at a relatively low temperature. The CVD process includes a silane-based thermal CVD process, a metal-based catalytic CVD process, a plasma CVD process, and the like. For example, an SiH4-based thermal CVD process has been in use as the sputtering process.
The reduction of the pressure in the CVD process has been under study in order to reduce the film forming temperature and to reduce the generation of dusts. The reduction of the pressure in the CVD process allows a decrease in the allowable film forming temperature.
Japanese Unexamined Patent Publication No. 5-266025 discloses the need for the reduction of the film forming pressure in the CVD process. This disclosure suggests that the reduction of the pressure results in the generation of SiNx as a by-product. However, no consideration is given to the effect of the by-product on the reliability of the formed film.
Japanese Unexamined Patent Publication No
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